Emissivity correction apparatus and method
AssigneeProcessing Technologies, LLC
InventorsJaim Nulman, Nick J. Bacile, Wendell T. Blonigan
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AssigneeProcessing Technologies, LLC
InventorsJaim Nulman, Nick J. Bacile, Wendell T. Blonigan
Estimating the term…
Radiation detectors and method measure the emissivity of a remote, heated semiconductor wafer in the presence of ambient radiation. Incident radiation within a selected waveband from a controlled source intermittently radiates the remote wafer, and reflected radiation therefrom is detected in synchronism with the intermittent incident radiation to yield output indications of emissivity of the wafer under varying processing conditions. The temperature of the wafer is monitored by another radiation detector (or detectors) operating substantially within the same selected waveband, and the temperature indications thus derived are corrected in response to the output indications of emissivity to provide indications of the true temperature of the wafer.
A method for measuring the emissivity of a remote object within a chamber including a boundary wall of quartz in the presence of ambient radiation supplied thereto through the quartz boundary wall, the method comprising the steps of:
Apparatus for measuring the emissivity of a remote object that is within a chamber including a boundary wall of quartz and that is heated to elevated temperatures by radiation supplied thereto through the quartz boundary wall, the apparatus comprising:
Dependencies are inferred from the claim text.