Thin film solar cell and method of making
AssigneeAtlantic Richfield Company
InventorsGary A. Pollock, Kim W. Mitchell, James H. Ermer
Life of this patent
Estimating the term…
Abstract
A structure for, and method of making, thin films of Group I-III-VI compound semiconductors such as copper indium diselenide for use in heterojunction photovoltaic devices fabricated on metal substrates. An interfacial film containing gallium is first deposited upon the substrate. Thereafter, copper and indium films are deposited and the resulting stacked film is heated in the presence of a source of selenium to form copper indium diselenide semiconductor material with improved adhesion to the substrate and improved performance.
Claims24
In a photovoltaic device of the type having a metal back contact, a Group I-III-VI semiconductor film of a first conductivity type on said back contact and a semiconductor film of conductivity type opposite said first type on said Group I-III-VI film, the improvement comprising:
- an interfacial film containing gallium between said metal back contact and said Group I-III-VI film.
In a photovoltaic device of the type having a metal back contact, a copper indium diselenide semiconductor film of a first conductivity type on said back contact and a semiconductor film of a second conductivity type on said copper indium diselenide film, the improvement comprising:
- an interfacial film containing gallium between said back contact and said copper indium diselenide film.
A photovoltaic device comprising:
- a metal back contact;
- an interfacial film comprising gallium on said back contact;
- a film of p-type copper indium diselenide semiconductor on said interfacial film;
- and
- a film of n-type semiconductor deposited on said copper indium diselenide film.
A method for making a photovoltaic device comprising:
- depositing an interfacial film containing gallium on a metal back contact,
- depositing a film of copper on said interfacial film,
- depositing a film of indium on said film of copper,
- heating said back contact and interfacial, copper and indium films in the presence of a source of selenium at a temperature and for a time selected to cause interdiffusion of copper, indium and selenium to form a film comprising copper indium diselenide.
A method for making a photovoltaic device comprising:
- depositing a first film comprising copper and at least one atomic percent gallium on a metal back contact,
- depositing a second film comprising indium on said first film, and
- heating said substrate with said first and second films in the presence of a source of selenium for a time and at a temperature selected to cause interdiffusion of copper, indium and selenium to form a film consisting essentially of copper indium diselenide.
Dependencies are inferred from the claim text.