Rapid thermal annealing of superconducting oxide precursor films on Si and SiO.sub.2 substrates
AssigneeFord Motor Company
InventorsMohammad Aslam, Eleftherios M. Logothetis, Richard E. Soltis
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Abstract
This invention is directed to a method of preparing a superconducting metal oxide film on silicon and silicon dioxide substrates. More particularly, the method comprises depositing by physical vapor deposition a superconducting metal oxide precursor directly on the substrate and then subjecting it to rapid thermal annealing in an oxygen atmosphere.
Claims9
A method of making a superconducting metal oxide film on a substrate selected from the group consisting of silicon and silicon dioxide, said method comprising:
- depositing a thin film of a superconducting metal oxide precursor consisting essentially of R, Ba, Cu, and O by a physical deposition technique directly onto said substrate in a thickness between about 0.1 and 3 .mu.m to form a film/substrate composite, wherein R is selected from the group consisting of rare earth elements and yttrium, which precursor film can be annealed in an oxygen atmosphere to yield a superconducting metal oxide film;
- then heating said film/substrate composite to a temperature between about 800.degree. C. and 950.degree. C. in less than about 10 seconds;
- then maintaining said film/substrate composite at said temperature in an oxygen atmosphere for between about 5 and 25 seconds to anneal said film;
- and
- then cooling said film/substrate composite to less than 300.degree. C. in less than about 3 minutes.
A method of making a superconducting metal oxide film on a substrate selected from the group consisting of silicon and silicon dioxide, said method comprising:
- depositing a thin film of a superconducting metal oxide precursor consisting essentially of R, Ba, Cu, and O by a sputtering technique directly onto said substrate in a thickness between about 0.1 and 3 .mu.m to form a film/substrate composite, wherein R is selected from the group consisting of rare earth elements and yttrium, which precursor film can be annealed in an oxygen atmosphere to yield a superconducting metal oxide film;
- then heating said film/substrate composite to a temperature between about 850.degree. C. and 950.degree. C. in an oxygen atmosphere in less than about 10 seconds;
- then maintaining said film/substrate composite at said temperature in said oxygen atmosphere for between about 5 and 25 seconds to anneal said film;
- and
- then cooling said film/substrate composite to less than 300.degree. C. in less than about 3 minutes.
Dependencies are inferred from the claim text.