EEPROM with protective circuit
AssigneeSiemens Aktiengesellschaft
InventorHartmut Schrenk
Life of this patent
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Abstract
A monolithically integrated MOS circuit includes a memory area having electrically programmable storage cells (E.sup.2 PROM) with outputs, a potential source, at least one blocking circuit for connecting at least one of the outputs to the potential source, and a radiation sensitive sensor connected to the blocking circuit for controlling the connection of the outputs to the potential source.
Claims6
Monolithically integrated MOS circuits, comprising a memory area having electrically programmable storage cells (E.sup.2 PROM) with read-outs, a potential source connected to the circuit, at least one blocking circuit for connecting at least one of said read-outs to said potential source, and at least one radiation sensitive sensor connected to said blocking circuit for activating said connection of said read-outs to said potential source in response to radiation, disposed in said memory area wherein said blocking circuit includes a transistor having a control path connected between said at least one read-out and said potential source, and a control input connected to said sensor.
Dependencies are inferred from the claim text.