Wiring structure of semiconductor pressure sensor
AssigneeSumitomo Electric Industries, Ltd.
InventorMasanori Nishiguchi
Life of this patent
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Abstract
A semiconductor pressure sensor comprises a sensor chip including an etching stop layer of high concentration impurity ions formed by ion implantation of impurity ions into a substrate of silicon single crystal or by deposition and diffusion and an epitaxial growth layer of silicon single crystal on the etching stop layer, a recess formed in the back of the sensor chip by etching, circuit elements formed on the sensor chip, diffusion leads for connecting the circuit elements, connecting regions, each formed between the etching stop layer and a predetermined position on the surface of the sensor chip, and diffusion regions, each formed between the predetermined position and one of terminals of the circuit elements.
Claims6
A semiconductor pressure sensor, comprising:
- a sensor chip including an etching stop layer of high concentration impurity ions formed by ion implantation of impurity ions into a substrate of silicon single crystal or by deposition and diffusion, and an epitaxial growth layer of silicon single crystal on said etching stop layer;
- a recess formed in the back of said sensor chip through etching;
- circuit elements formed on said sensor chip;
- diffusion lead portions for wiring said circuit elements;
- first connecting regions, each formed between said etching stop layer and a first predetermined position on the surface of said sensor chip;
- and
- first diffusion regions, each formed between said first predetermined position and one of terminals of said circuit elements.
Dependencies are inferred from the claim text.