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US 4,908,685 AGranted
Magnetoelectric transducer
AssigneeAsahi Kasei Kogyo Kabushiki Kaisha
InventorsIchiro Shibasaki, Takashi Kajino
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Abstract
A magnetoelectric transducer comprising a group III-V compound semiconductor thin film 14 of 0.1 .mu.m to 10 .mu.m thickness formed as a magnetic field sensing portion on a substrate 12 overlaying an organic insulating layer 13, and a multilayer wire bonding electrode including an ohmic electrode 16 formed on a required area of the thin film and a hard metal layer 17 and a bonding layer 18 which are laminated on the ohmic electrode.
Claims8
A compound semiconductor magnetoelectric transducer comprising:
- a substrate and an organic insulating layer overlaying said substrate;
- a group III-V compound semiconductor layer of 0.1 to 10.mu.m thickness disposed on said substrate and having a predetermined pattern to provide a magnetic field sensing portion;
- a plurality of electrodes each formed of a laminated stack of three metal layers;
- the first metal layer of said laminated stack being continuous to and in ohmic contact with said semiconductor layer and made of a material selected from the group consisting of Cu, Au, Au alloys and Au-Ge alloys;
- the intermediate layer of said laminated stack providing a mechanical strength above a predetermined value and being formed on said first metal layer and made of a material selected from the group consisting of Ni, Cu and their alloys;
- the third layer of said laminated stack being provided for wire bonding and being formed on said intermediate layer and made of Au;
- and
- said first metal layer, said intermediate metal layer and said third layer each having a thickness of between about 2-5 .mu.m.
5 more elements
Dependencies are inferred from the claim text.