Method of measuring FET noise parameters

A method of determining a noise parameter of a field effect transistor (FET), comprising:

• determining the input gate-to-source capacitance (C.sub.gs), input resistance (R.sub.T) and transconductance (g.sub.m) parameters of the FET,
• measuring the output power of the FET's intrinsic noise (P.sub.n) with a receiver,
• determining the power spectral density (S.sub.io) of the FET's intrinsic noise current independent of the receiver used to measure P.sub.n, and
• calculating the noise parameter based upon said measurements and said S.sub.io determination.

A method of determining the minimum noise figure F.sub.min of a field effect transistor (FET) which is connected in a circuit having a conductance G.sub.c, comprising:

• determining the input gate-to-source capacitance (C.sub.gs), input resistance (R.sub.T), transconductance (g.sub.m) and output resistance (R.sub.o) parameters of the FET,
• measuring the output power (P.sub.n) of the FET's intrinsic noise with a receiver having a gain A, a band-width B, and an input resistance R.sub.in, and
• calculating F.sub.min for an operating radian frequency of interest .omega..sub.o in accordance with the equation:
• ##EQU16## where ##EQU17##

A method of determining the minimum noise figure F.sub.min of a field effect transistor (FET) which is connected in a circuit having a conductance G.sub.c, comprising:

• determining the input gate-to-source capacitance (C.sub.gs), input resistance (R.sub.T) and transconductance (g.sub.m) parameters of the FET,
• measuring the output power (P.sub.n) of the FET's intrinsic noise with a receiver having a gain A, a bandwidth B, and an input resistance R.sub.in, and
• calculating F.sub.min for an operating radian frequency of interest .omega..sub.o in accordance with the equation:
• F.sub.min =1+2R.sub.n (G.sub.c +G.sub.in)+2[R.sub.n (G.sub.c +G.sub.in)+R.sub.n.sup.2 (G.sub.c +G.sub.in).sup.2 ].sup.1/2,
• where ##EQU18## k=Boltzman's constant, and T=temperature.

A method of determining the minimum noise figure F.sub.min of a field effect transistor (FET) which is connected in an embedding circuit having a conductance G.sub.c, comprising:

• determining the input gate-to-source capacitance (C.sub.gs), input resistance (R.sub.T) and transconductance (g.sub.m) parameters of the FET,
• measuring the output power (P.sub.n) of the FET's intrinsic noise with a receiver having a gain A, a bandwidth B, and an input resistance R.sub.in and
• calculating F.sub.min for an operating radian frequency of interest .omega..sub.o in accordance with the equation:
• F.sub.min =1+2R.sub.n (G.sub.c +G.sub.in +G.sub.cor)+2[R.sub.n (G.sub.c +G.sub.in)+R.sub.n.sup.2 (G.sub.c +G.sub.in +G.sub.cor).sup.2 ].sup.1/2,
• where ##EQU19## k=Boltzman's constant, and T=temperature.