Barrier layer arrangement for conductive layers on silicon substrates
AssigneeEastman Kodak Company
InventorsLiang-Sun Hung, John A. Agostinelli
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Abstract
A barrier layer triad intended to protect a silicon substrate and an overlying conductive layer from mutual contamination is disclosed as well as a process for its preparation. The barrier layer triad is comprised of a first triad layer located adjacent the silicon substrate consisting essentially of silica, a third triad layer remote from the silicon substrate consisting essentially of at least one Group 4 heavy metal oxide, and a second triad layer interposed between the first and third triad layers consisting essentially of a mixture of silica and at least one Group 4 heavy metal oxide.
Claims17
A circuit element comprised of a silicon substrate and a conductive layer located on the substrate,
- characterized in that
- the conductive layer consists essentially of a rare earth alkaline earth copper oxide and
- a barrier layer triad is interposed between the silicon substrate and the conductive layer comprised of a first triad layer located adjacent the silicon substrate consisting essentially of silica, a third triad layer remote from the silicon substrate consisting essentially of a least one Group 4 heavy metal oxide, and a second triad layer interposed between the first and third triad layers consisting essentially of a mixture of silica and at least one Group 4 heavy metal oxide.
Dependencies are inferred from the claim text.