Crystalline rare earth alkaline earth copper oxide thick film circuit element with superconducting onset transition temperature in excess of 77%

A circuit element comprising

• an insulative substrate and
• means for providing a conductive path between at least two locations on the substrate including a thick film conductor, the thick film conductor being comprised of a crystalline rare earth alkaline earth copper oxide layer having a thickness of at least 5 .mu.m,
• characterized in that
• said substrate is magnesia and
• said crystalline rare earth alkaline earth copper oxide layer exhibits a superconducting onset transition temperature in excess of 77.degree. K. and is comprised of a R.sub.1 A.sub.2 C.sub.3 crystalline phase.

A circuit element comprising

• an insulative substrate and
• means for providing a conductive path between at least two locations on the substrate including a thick film conductor, the thick film conductor being comprised of a crystalline rare earth alkaline earth copper oxide layer having a thickness of at least 5 .mu.m,
• characterized in that
• said substrate is alumina and
• said crystalline rare earth alkaline earth copper oxide layer exhibits a superconducting onset transition temperature in excess of 77.degree. K. and is comprised of a R.sub.1 A.sub.2 C.sub.3 crystalline phase.

A circuit element comprising

• an insulative substrate and
• means for providing a conductive path between at least two locations on the substrate including a thick film conductor, the thick film conductor being comprised of a crystalline rare earth alkaline earth copper oxide layer having a thickness of at least 5 .mu.m,
• characterized in that
• said substrate is aluminum nitride and
• said crystalline rare earth alkaline earth copper oxide layer exhibits a superconducting onset transition temperature in excess of 77.degree. K. and is comprised of a R.sub.1 A.sub.2 C.sub.3 crystalline phase.

A circuit element comprising

• an insulative substrate presenting first and second parallel major surfaces and
• a first means for providing a conductive path between at least two locations on the first major surface including a first thick film conductor,
• a second means for providing a conductive path between at least two locations on the second major surface incoluding a second thick film conductor,
• said first and second thick film conductors each having a thickness of at least 5 .mu.m,
• characterized in that
• the first and second thick film conductors are each comprised of a crystalline rare earth alkaline earth copper oxide exhibits a superconducting onset transition temperature in excess of 77.degree. K. and is comprised of a R.sub.1 A.sub.2 C.sub.3 crystalline phase and
• the substrate is chosen from the class consisting of strontium titanate, magnesia, alumina, and aluminum nitride.

A circuit element comprising

• an insulative substrate presenting first and second parallel major surfaces,
• a first means for providing a conductive path between at least two locations on the first major surface including a thick film conductor having a thickness of at least 5 .mu.m,
• a second means for providing a conductive path between at least two locations on the second major surface including a thick film conductor, and
• a third means for providing a conductive path between the first and second conductive path means,
• characterized in that
• the first means is comprised of a crystalline rare earth alkaline earth copper oxide which exhibits a superconducting onset transition temperature in excess of 77.degree. K. and is comprised of a R.sub.1 A.sub.2 C.sub.3 crystalline phase and
• the substrate is chosen from the class consisting of strontium titanate, magnesia, alumina, and aluminum nitride.