US 4,908,324 AGranted

Method of manufacturing bipolar transistor

AssigneeKabushiki Kaisha Toshiba

InventorsHiroyuki Nihira, Nobuyuki Itoh

Life of this patent

Estimating the term…

Loading patent…

Abstract

A method of manufacturing a bipolar transistor is disclosed. A first mask material film pattern is formed on an internal base region prospective portion on a collector region of a first conductive type, and then a first conductive film is deposited. A recess around the projection of the mask film pattern are transferred on the surface of the first conductive film. After a second mask material film pattern is buried in the recess, the first conductive film is selectively etched using the second mask material pattern as a mask, thereby exposing the first mask material film pattern. The first conductive film is continuously, selectively etched by anisotropic etching using the exposed first mask material film pattern and the second mask material film pattern as etching masks to form a first opening between the two mask material film patterns. An impurity of a second conductivity type is doped through the first opening to form an external base region. The first opening is buried with a second conductive film before or after formation of the external base region. The first mask material film pattern is removed to form a second opening. After a thermal oxide film is formed on the surface of the second conductive film, an impurity of the second conductivity type is doped through the second opening, thereby forming the internal base region. An impurity of the first conductivity type is doped in the wafer through the second opening to form an emitter region.

Claims19

Dependent claims

A method of manufacturing a bipolar transistor, comprising the steps of:

(a) forming an insulating film on a semiconductor wafer having a collector region of a first conductivity type;
(b) depositing a first mask material film on the insulating film, and patterning said first mask material film, thereby forming a first mask material film pattern covering an internal base region prospective portion;
(c) depositing a conductive material on the surface to cover said first mask material film pattern, thereby forming a first conductive film to be used as a part of a base electrode;
(d) burying a second mask material film pattern in the surface recess of said first conductive film;
(e) selectively etching said first conductive film using said second mask material film pattern as an etching mask to expose said first mask material film pattern;
(f) continuously, selectively etching said first conductive film using said exposed first mask material film pattern and said second mask material film pattern as etching masks, thereby forming a first opening for forming an external base region between said two mask material film patterns;
(g) removing said second mask material film pattern;
(h) burying a second conductive film serving as a part of a base electrode in said first opening, while doping an impurity of a second conductivity type into said wafer through said first opening to form said external base region of the second conductivity type;
(i) removing said first mask material film pattern to form a second opening for forming an internal base region;
(j) forming a thermal oxide film on the surface of said second conductive film;
(k) doping an impurity of the second conductivity type into said wafer through said second opening to form said internal base region of the second conductivity type;
and
(l) doping an impurity of the first conductivity type into said wafer through said second opening to form an emitter region of the first conductivity type in said internal base region.

10 more elements

A method of manufacturing a bipolar transistor, comprising the steps of:

(a) forming an insulating film on a semiconductor wafer having a collector region of a first conductivity type;
(b) depositing a first mask material film on the insulating film, and patterning said first mask material film, thereby forming a first mask material film pattern covering an internal base region prospective portion;
(c) depositing a refractory metal on the surface to cover said first mask material film pattern, thereby forming a refractory metal film to be used as a part of a base electrode;
(d) burying a second mask material film pattern in the surface recess of said refractory metal film;
(e) selectively etching said refractory metal film using said second mask material film pattern as an etching mask to expose said first mask material film pattern;
(f) continuously, selectively etching said refractory metal film using said exposed first mask material film pattern and said second mask material film pattern as etching masks, thereby forming a first opening for forming an external base region between said two mask material film patterns;
(g) removing said second mask material film pattern;
(h) burying a polycrystalline silicon film doped with an impurity of a second conductivity type and serving as a part of a base electrode in said first opening;
(i) removing said first mask material film pattern to form a second opening for forming an internal base region;
(j) forming a thermal oxide film on the surface of said polycrystalline silicon film to diffuse the impurity contained in said polycrystalline silicon film into said collector region, thereby forming said external base region of the second conductivity type;
(k) doping an impurity of the second conductivity type in said wafer through said second opening to form said internal base region of the second conductivity type;
(l) depositing a third conductive film serving as a part of an emitter electrode;
and
(m) diffusing an impurity of the first conductivity type from said third conductive film into said wafer to form an emitter region of the first conductivity type.

11 more elements

A method of manufacturing a bipolar transistor, comprising the steps of:

(a) forming an anti-oxidation film on a semiconductor wafer having a collector region of a first conductivity type, and stacking an insulating film for step forming on said anti-oxidation film;
(b) patterning stacked films consisting of said anti-oxidation film and said insulating film for step forming to form a stacked film pattern covering an internal base region prospective portion;
(c) depositing a first mask material film on the entire surface;
(d) depositing a conductive material on the surface to cover said first mask material film, thereby forming a first conductive film used as a part of a base electrode;
(e) burying a second mask material film pattern in the recess on the surface of said first conductive film;
(f) selectively etching said first conductive film using said second mask material film pattern as an etching mask to expose said first mask material film on said stacked film pattern;
(g) completely, selectively etching said first conductive film by anisotropic etching using said exposed first mask material film and said second mask material film patterns as etching masks, and exposing the surface of said collector region, thereby forming a first opening for forming an external base region between said two mask material film patterns;
(h) removing said second mask material film pattern;
(i) burying a second conductive film doped with an impurity of the first conductivity type serving as a base electrode in said first opening;
(j) removing said insulating film for step forming which constitutes said stacked film pattern to form a second opening for forming an internal base region;
(k) performing thermal oxidation using said anti-oxidation film left in step (i) to form a thermal oxide film on the surface of said second conductive film, and diffusing the impurity contained in said second conductive film into said collector region, thereby forming said external base region of a second conductivity type;
(l) doping an impurity of the second conductivity type into said wafer through said second opening, thereby forming an emitter region of the second conductivity type;
(m) exposing the wafer surface through said second opening, and depositing a third conductive film serving as a part of an emitter electrode;
and
(n) diffusing an impurity of the first conductivity type from said third conductive film in said wafer to form an emitter region of the first conductivity type.

12 more elements

Dependencies are inferred from the claim text.

Facts

Application: 07/225,804Filed 29 Jul 1988
Priority: JP 62-18941929 Jul 1987
Granted: 13 Mar 1990
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10D 10/051
Manufacture or treatment: of vertical BJTs
H10D 64/0113
To Group IV semiconductors: the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
H10P 76/40
Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography: of masks comprising inorganic materials
Y10S 148/124
Metal treatment: polycrystalline emitter