Back to results
US 4,908,299 AGranted
Pattern forming method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorKazufumi Ogawa
Life of this patent
Estimating the term…
Abstract
A method of forming any film pattern on an arbitrary substrate, more particularly, a pattern forming method which comprises selectively forming a film on an arbitrary substrate, by use of chemical reaction, and further, a method of forming a pattern of an organic film by selectively removing the organic film at a lower layer, with the pattern of the Langmuir-Blodgett's film containing Si as a mask.
Claims1
A pattern forming method comprising:
- a step of forming several layers of a sensitivee Langmuir-Blodgett film comprising a straight chain hydrocarbon containing Si atoms and responsive groups of acetylene, cyano or vinyl at one end of the hydrocarbon chain, on an arbitrary substrate covered with an organic film;
- a step of forming a pattern of the Langmuir-Blodgett film by selectively polymerizing or decomposing the sensitive Langmuir-Blodgett film by irradiation of energy beams, followed by development;
- and
- a step of selectively etching said organic film with plasma containing oxygen, with the pattern of said Langmuir-Blodgett film as a mask.
1 more element
Dependencies are inferred from the claim text.