Method of growing a semiconductor device structure
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorYukio Gotoh
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Abstract
A semiconductor device includes a plurality of crystalline layers successively disposed directly on a substrate or on a buffer layer on the substrate and a getter layer comprising a metal of high activity disposed between the substrate or the buffer layer and the plurality of crystalline layers. An MO-CVD crystal growth method for growing a plurality of crystalline layers successively on a substrate or on a substrate having a buffer layer by supplying gases to a reaction tube containing a substrate includes growing a getter layer, including a metal of high activity for removing impurities, on the substrate or the buffer layer before growing a target crystalline layer.
Claims2
A method of making a crystalline semiconductor device including a plurality of compound semiconductor layers, at least one of said layers including an element such as A1 that can react with impurities such as oxygen during the crystal growth thereof, thereby harming the electronic properties of that layer comprising:
- growing directly on a surface of a GaAs substrate a layer of
- A1GaAs as a getter layer for reacting with and removing impurities from the ambient during growth of the layer;
- growing a layer of GaAs directly on and covering said getter layer as a first buffer layer;
- and
- successively growing as a laser structure on said first buffer layer layers of A1GaInP, GaInP, and A1GaInP.
Dependencies are inferred from the claim text.