Gas laser device
AssigneeFanuc Corporation
InventorNorio Karube
Life of this patent
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Abstract
A gas laser device in which a laser medium gas is circulated in a discharge tube and a laser beam is generated from the gas excited by a high-frequency electric discharge, includes a high-frequency power supply (3) serving as an electric discharge power supply and a plurality of reflecting mirrors (6, 7) disposed axially in the discharge tube (1). The distance (d) between electrodes of the discharge tube (1) is selected such that electrons will not collide with side walls of the discharge tube based on the frequency (f) of the high-frequency power supply (1) and electron mobility. The oscillation efficiency of the laser beam is increased because of electron capture and since the distance traversed by the laser beam (9) in the discharge tube (1) is increased.
Claims7
A gas laser device in which a laser medium gas is circulated inside a discharge tube having outer surfaces and two opposite ends and a laser beam is generated from the gas excited by a high-frequency electric discharge, comprising:
- two electrodes connected to the outer surfaces of the discharge tube;
- a high-frequency power supply, electrically coupled to one of the first and second electrodes, the other of the first and second electrodes being grounded, for producing an electric discharge between the two electrodes;
- the two electrodes of said discharge tube being spaced apart by a distance defined by the equation
- l=2 .mu.E/.omega.=Ve/.pi.f<d,
- where
- d=distance between electrodes
- l=distance electrons move per half frequency of the power output
- .mu.=electron mobility
- E=electric field intensity
- .omega.=angular velocity of the power supply
- f=frequency of the power supply, and
- Ve=speed of the electrons
- a plurality of reflecting mirrors disposed at opposite ends of the discharge tube for reflecting the laser beam along a folded path having a plurality of folds and amplifying the laser beam;
- and
- wherein said high-frequency power supply comprises a semiconductor device.
A gas laser device comprising:
- a discharge tube having two opposite outer surfaces and two opposite ends;
- first and second electrodes, each being connected to one of the two opposite outer surfaces of the discharge tube;
- a high-frequency power supply electrically coupled to one of the first and second electrodes, the other of the first and second electrodes being grounded, for producing an electric discharge;
- the two electrodes being sufficiently spaced apart by a distance
- l=2 .mu.E/.omega.=Ve/.pi.f<d,
- where
- d=distance between electrodes
- l=distance electrons move per half frequency of the power output
- .mu.=electron mobility
- E=electric field intensity
- W=angular velocity of the power supply
- F=frequency of the power supply, and
- Ve=speed of the electrons
- reflecting means, disposed at the opposite ends of discharge tube, for reflecting a laser beam along a folded path having a plurality of folds and amplifying the laser beam;
- and
- wherein said high-frequency power supply comprises a semiconductor device.
Dependencies are inferred from the claim text.