Monolithic laser diode structure for microwave generation
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsLew Goldberg, Joseph F. Weller
Life of this patent
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Abstract
A semiconductor laser structure for generating high frequency modulation of light intensity is disclosed. The apparatus comprises a seminconductor substrate, a semiconductor master laser and first and second semiconductor slave lasers fabricated adjacent to each other on the semiconductor substrate. Bias current applied to the master oscillator is modulated at a preselected frequency to cause the master laser to generate a plurality of optical frequency modulation sidebands. The first and second slave lasers, which are tuned to be close to the preselected first and second sidebands of the master laser, are injection-locked to the first and second preselected sidebands of the master laser.
Claims11
An apparatus comprising:
- a semiconductor substrate;
- a semiconductor master laser and first and second semiconductor slave lasers fabricated adjacent to each other on said semiconductor substrate, said master laser generating an optical output at a frequency f.sub.o and sidebands at multiples of .DELTA.f, said first and second slave lasers being tuned to approximately coincide with first and second preselected sidebands of said master laser;
- and
- means for respectively injection-locking said first and second slave lasers to said first and second preselected sidebands.
An apparatus comprising:
- a semiconductor substrate;
- a semiconductor master laser and semiconductor first and second slave lasers fabricated adjacent to each other on said semiconductor substrate;
- means for supplying to said semiconductor master laser a bias current modulated at a preselected frequency to cause said master laser to generate a plurality of optical frequency modulation sidebands;
- means for selectively adjusting the optical frequencies of said semiconductor first and second slave lasers to be close to preselected first and second sidebands of said master laser;
- and
- means for injection-locking said first and second slave lasers to said first and second preselected sidebands, respectively.
Dependencies are inferred from the claim text.