Semiconductor device having silicon oxynitride film with improved moisture resistance

A semiconductor device comprising:

• a semiconductor substrate having a plurality of circuit regions therein, an insulating film covering the surface of said semiconductor substrate, an aluminum wiring layer having a width of 2 .mu.m or less, said aluminum wiring layer being formed on said insulating film, and a silicon oxynitride film covering said metal wiring layer, said silicon oxynitride film containing silicon oxynitride material consisting essentially of silicon oxynitride represented by the formula Si.sub.x N.sub.y O.sub.z and hydrogen, wherein x, y and z represent a set of atomic ratios and x+y+z=1.00, said set of atomic ratios falling within the area A-B-C-D-E-F-G-H of FIG. 2 of the drawings or on the lines connecting the vertices of said area and said sets of atomic ratios of the vertices of said area being as follows:
• A (x=0.51, y=0.28, z=0.21)
• B (x=0.47, y=0.28, z=0.25)
• C (x=0.44, y=0.31, z=0.25)
• D (x=0.41, y=0.36, z=0.23)
• E (x=0.41, y=0.39, z=0.20)
• F (x=0.44, y=0.38, z=0.18)
• G (x=0.46, y=0.37, z=0.17)
• H (x=0.51, y=0.32, z=0.17),
• and a content of hydrogen is 5 to 18 atomic percent of said Si.sub.x N.sub.y O.sub.z.