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AssigneesHitachi, Ltd., Hitachi Microcomputer Engineering Ltd.
InventorsDaisuke Okada, Akihisa Uchida, Toshihiko Takakura, Shinji Nakashima, Nobuhiko Ohno, Katsumi Ogiue
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A semiconductor integrated circuit device is provided with polycrystalline silicon filling U-grooves etched in a semiconductor substrate to form isolation regions which prevent any short-circuiting between the polycrystalline silicon and electrodes or wiring formed on the semiconductor substrate. A silicon dioxide film is formed within the U-grooves, and a silicon nitride film and a silicon dioxide film are further formed thereon. The silicon nitride film has a high hardness which suppresses the development of crystal defects in the peripheral active regions due to the expansion of the surface of the polycrystalline silicon when it is oxidized. When the surface of the polycrystalline silicon is oxidized, the oxidation proceeds along the oxide film over the nitride film, so that the whole of the oxide film is formed thickly. Therefore, the silicon nitride film and the silicon dioxide film are provided with an increased margin against the etching used for forming contact holes.
A semiconductor body, including isolation regions for isolating semiconductor elements to be formed in said semiconductor body, comprising:
A semiconductor integrated circuit device provided with isolation regions for isolating elements formed in a semiconductor body by utilizing grooves that are formed by etching a main surface of said semiconductor body, thereby providing groove surfaces of the semiconductor body, said isolation regions comprising:
A semiconductor integrated circuit device comprising:
A semiconductor body having isolation regions therein, formed by a process comprising the steps of:
A semiconductor integrated circuit device, manufactured by a process comprising the steps of:
A semiconductor body, including isolation regions for isolating semiconductor elements to be formed in said semiconductor body, comprising:
A semiconductor integrated circuit device provided with isolation regions for isolating elements formed in a semiconductor body by utilizing grooves that are formed by etching a main surface of said semiconductor body, the grooves having groove surfaces in the semiconductor body, said isolation regions comprising:
A semiconductor integrated circuit device, provided with isolation regions for isolating semiconductor elements, comprising:
Dependencies are inferred from the claim text.