Optical semiconductor device
AssigneeFuji Photo Film Co., Ltd.
InventorHidetoshi Shinada
Life of this patent
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Abstract
An optical semiconductor device of broad area structure comprising an active region positioned between a p-type semiconductor region having a stripe-like anode electrode and an n-type semiconductor region having a cathode electrode, the anode electrode having a broad stripe width in which the photon density is increased to amplify the light with the aid of injected into the active region dependent on the current density flowing between the anode and cathode electrodes, wherein the density distribution of the injected carriers exhibits Gauss distribution in the widthwise direction of the stripe width. Therefore, it is possible to supply such a current as to produce the density distribution of the injected carriers with no excess or shortage.
Claims16
An optical semiconductor device of a type having a broad stripe-like anode structure comprising:
- a first semiconductor region having a stripe-like anode electrode disposed on one of its principal surfaces;
- a second semiconductor region having a cathode electrode disposed on one of its principal surfaces;
- an active region formed between said first and second semiconductor regions, said active region for amplifying incident light propagating therethrough;
- wherein opposite end faces of a semiconductor structure formed by a combination of said first and second semiconductor regions and said active region represent incident and emission sides perpendicular to a direction in whih a light propagates through said active region;
- and
- wherein said anode electrode has a broad stripe width in which photon density is increased to amplify light with the aid of carriers injected into said active region dependent on the current density flowing between said anode and cathode electrodes, wherein a density distribution of the injected carriers exhibits Gaussian distribution in the widthwise direction of said stripe width.
An optical semiconductor device of a type having a broad stripe-like anode structure comprising:
- a p-type semiconductor region having a stripe-like anode electrode disposed on one of its principal surfaces;
- an n-type semiconductor region having a cathode electrode disposed on one of its principal surfaces;
- an active region formed between said p-type and n-type semiconductor regions, said active region for amplifying incident light propagating therethrough;
- and
- wherein opposite end faces of a semiconductor structure formed by a combination of said p-type and n-type semiconductor regions and said active region represent incident and emission sides perpendicular to a direction in which a light propagates through said active region;
- and
- wherein said anode electrode has a broad stripe width in which a photon density is increased to amplify light with the aid of carriers injected into said active region dependent on the current density flowing between said anode and cathode electrodes, wherein a density distribution of the injected carriers exhibits Gaussian distribution in the widthwise direction of said stripe width.
An optical semiconductor device for amplifying an incident light and emitting the amplified light comprising:
- a first semiconductor region having a stripe-like anode electrode disposed on one of its principal surfaces, a stripe width of said anode electrode being not less than 10 .mu.m;
- a second semiconductor region having a cathode electrode disposed on one of its principal surfaces;
- an active region formed between said first and second semiconductor regions, said active region for amplifying incident light propagating therethrough and having an incident side end face from which light enters said active region and an emission side end face from which amplified light is emitted, said incident and emission side end faces being perpendicular to a direction in which light proceeds through said active region;
- and
- density distribution determining means for allowing the density distribution of carriers, which are injected into said active region dependent on the current density flowing between said anode and cathode electrodes, to exhibit Gaussian distribution in the widthwise direction of said stripe width.
Dependencies are inferred from the claim text.