Semiconductor tandem solar cells with metal silicide barrier
AssigneeKanegafuchi Kagaku Kogyo Kabushiki Kaisha
InventorsJun Takada, Minori Yamaguchi, Yoshihisa Tawada
Life of this patent
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Abstract
A heat-resistant multijunction semiconductor device comprising a p-layer, a n-layer and a diffusion-blocking layer, the diffusion-blocking layer being provided between the p-layer and the n-layer. The semiconductor device can reduce the deterioration in quality which is caused by the diffusion of dopant atoms in the p-layer and n-layer, respectively, into the other layer.
Claims15
A multijunction semiconductor device comprising at least one p-type semiconductor layer, at least one n-type semiconductor layer and at least one dopant diffusion-blocking layer, wherein each semiconductor layer is made of a material selected from the group consisting of amorphous semiconductor material and amorphous semiconductor material containing microcrystals, said dopant diffusion-blocking layer being provided between a p-type semiconductor layer and an n-type semiconductor layer which would be in contact with each other if the dopant diffusion-blocking layer were not provided, and said dopant diffusion-blocking layer comprising at least one layer of metal silicide which is adjacent to one of the group consisting of said p-type semiconductor layer and said n-type semiconductor layer.
A multijunction semiconductor device comprising at least one p-type semiconductor layer, at least one n-type semiconductor layer, at least one dopant diffusion-blocking layer, and an electrode provided on one of said p-type semiconductor layer and said n-type semiconductor layer, wherein each semiconductor layer is made of a material selected from the group consisting of amorphous semiconductor material and amorphous semiconductor material containing microcrystals, said dopant diffusion-blocking layer being provided between a p-type semiconductor layer and an n-type semiconductor layer which would be in contact with each other if the dopant diffusion-blocking layer were not provided, and said diffusion-blocking layer comprising at least one layer of metal silicide which is adjacent to one of said p-type semiconductor layer and said n-type semiconductor layer.
Dependencies are inferred from the claim text.