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US 4,907,051 AGranted
Photocathode
AssigneeSharp Kabushiki Kaisha
InventorShaw Ehara
Life of this patent
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Abstract
A photocathode with high photoelectric conversion ratio over an extended wavelength range of incident light has a hetero junction formed between thin films of a p-type amorphous silicon alloy having energy gap matching the energy of the incident light and an n-type semiconductor with small work function or large coefficient of secondary electron emission.
Claims13
A photocathode comprising
- a p-type amorphous silicon thin film formed with an amorphous silicon alloy having an energy gap which matches photon energy of incident light, and
- an n-type semiconductor thin film composed of a material selected from the group which consists of Cs.sub.2 O, oxides of Ba, Sr, Ca, B and La, LaB.sub.6, BaCO.sub.3, SrCO.sub.3, CaCO.sub.3 .multidot.SrCO.sub.3 .multidot.CaCO.sub.3, BaO.multidot.SrO.multidot.CaO, and mixtures thereof,
- a hetero junction being formed between said p-type amorphous silicon type thin film and said n-type semiconductor thin film.
Dependencies are inferred from the claim text.