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US 4,906,894 AGranted
Photoelectron beam converting device and method of driving the same
AssigneeCanon Kabushiki Kaisha
InventorsMamoru Miyawaki, Yukio Masuda, Ryuichi Arai, Nobutoshi Mizusawa, Takahiko Ishiwatari, Hitoshi Oda
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Abstract
A photoelectron beam converting device including a semiconductor substrate having a p-n junction formed between an n-type region and a p-type region and an opening portion formed on the side of the semiconductor substrate. An electron beam is generated by a light which enters from the opening portion and by a reverse voltage to be applied to the p-n junction.
Claims2
A photoelectric conversion device for electron emission comprising:
- an n-type semiconductor region having an electron emission surface for emitting electrons on one side thereof;
- a first p-type semiconductor region doped with a p-type impurity of a predetermined concentration being disposed on said n-type semiconductor region at a side opposite of said electron emission surface, said first p-type semiconductor region thereby forming a p-n junction with said n-type semiconductor region;
- a second p-type semiconductor region doped with a p-type impurity of a concentration less than the predetermined concentration of said first p-type semiconductor region, said second p-type semiconductor being arranged surrounding said first p-type semiconductor region on one side of said second p-type semiconductor region;
- and
- means for applying a reverse bias voltage to the p-n junction,
- wherein said second p-type semiconductor region has a concave portion, on a side opposite to the side surrounding said first p-type semiconductor region, for receiving incident light.
3 more elements
A photoelectric conversion device for electron emission comprising:
- a p-type semiconductor region doped with a p-type impurity of a predetermined high concentration;
- an n-type semiconductor region disposed on at least a portion of said p-type semiconductor region forming a p-n junction on one side thereof, said n-type semiconductor region having an electron emission surface for emitting electrons at a side opposite to the p-n junction;
- at least one region disposed between said n-type semiconductor and said p-type semiconductor, wherein said at least one region comprises a material selected from the group consisting of a non-doped semiconductor and an insulator;
- a photoconductive region disposed on said p-type semiconductor region on a side opposite to the side in which the p-n junction is formed;
- and
- means for applying reverse bias voltage to the p-n junction.
3 more elements
Dependencies are inferred from the claim text.