Back to results
US 4,906,593 AGranted
Method of producing a contact plug
AssigneeFujitsu Limited
InventorsYoshimi Shioya, Yuji Furumura, Yasushi Ohyama, Shin-ichi Inoue, Tsutomu Ogawa, Kiyoshi Watanabe, Hiroshi Goto
Life of this patent
Estimating the term…
Abstract
A method of producing a semiconductor device comprising the steps of: forming a window or contact hole in an insulating layer to expose a portion of a semiconductor substrate or a lower conductor line; forming semiconductor material (silicon) in the window; substituting the material with a metal (tungsten) by reaction of the semiconductor material with a metal compound (WF.sub.6 gas); and forming a conductor line over the metal within the window.
Claims11
A method for preparing a semiconductor device comprising:
- providing a semiconductor device having a conducting portion;
- forming an insulating layer on said device in covering relationship to said conducting portion;
- forming a contact hole in said insulating layer to expose said conducting portion;
- filling said contact hole with a silicon material;
- contacting the silicon material in the contact hole with a metal compound capable of reacting with silicon to form a metal, said metal thereby depositing in said hole to fill the latter and provide an electrical connection through said insulating layer for the conducting portion;
- and
- forming a line of conducting material on said insulating layer and on the metal deposited in the hole, said metal in the hole thereby electrically interconnecting the line and the conducting portion.
4 more elements
Dependencies are inferred from the claim text.