US 4,906,549 A · Positive-working photoresist composition with quinone diazide sulfonic acid ester and novolac made from m-cresol, p-cresol and aliphatic phenol with 2-6 carbon atoms

Abstract

A positive-working photoresist composition suitable for fine patterning in the manufacturing of semiconductor devices such as VLSIs with high fidelity is proposed. The composition comprises: (A) 100 parts by weight of a phenolic novolac resin prepared by the condensation reaction of a specific ternary mixture of three kinds of phenolic compounds and formaldehyde; and (B) 20-60 parts by weight of a photosensitizer which is preferably an ester of naphthoquinone diazidesulfonic acid and a hydroxylated benzophenone compound. The phenolic mixture is composed of 10-45% by weight of m-cresol, 35-88% by weight of p-cresol and 2-30% by weight of a substituted phenol represented by the general formula R.C.sub.6 H.sub.4.OH, in which R is a monovalent aliphatic hydrocarbon group having 2-6 carbon atoms selected from alkyl and alkenyl groups.

Claims5

Dependent claims

A positive-working photoresist composition which comprises, in admixture:

(A) 100 parts by weight of a phenolic novolac resin which is a condensation product of a phenolic mixture and formaldehyde;
and
(B) from 20 to 60 parts by weight of a photosensitizer mainly composed of an ester of naphthoquinone diazidesulfonic acid, the phenolic mixture being composed of (a) from 10 to 45% by weight of a first phenolic compound which is m-cresol, (b) from 35 to 88% by weight of a second phenolic compound which is p-cresol, and (c) from 2 to 30% by weight of a third phenolic compound which is a substituted phenol represented by the general formula
R.C.sub.6 H.sub.4.OH,
in which R is a monovalent aliphatic hydrocarbon group having 2 to 6 carbon atoms selected from the class consisting of alkyl groups and alkenyl groups and C.sub.6 H.sub.4 is a phenylene group.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

07/182,848Filed 18 Apr 1988 · continuation in part

Priority

JP 61-1026172 May 1986

Granted

6 Mar 1990

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

G03F 7/0236
Characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides: condensation products of…
C08G 8/12
Of formaldehyde, e.g. of formaldehyde formed in situ: with monohydric phenols having only one hydrocarbon substituent ortho on para to the OH…
C08G 8/24
Of formaldehyde, e.g. of formaldehyde formed in situ: with mixtures of two or more phenols which are not covered by only one of the groups…
C08K 5/43
Sulfur-, selenium-, or tellurium-containing compounds: compounds containing sulfur bound to nitrogen

Positive-working photoresist composition with quinone diazide sulfonic acid ester and novolac made from m-cresol, p-cresol and aliphatic phenol with 2-6 carbon atoms

Life of this patent

Positive-working photoresist composition with quinone diazide sulfonic acid ester and novolac made from m-cresol, p-cresol and aliphatic phenol with 2-6 carbon atoms

Life of this patent

Abstract

Claims5