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US 4,906,341 AGranted
Method of manufacturing semiconductor device and apparatus therefor
AssigneeKabushiki Kaisha Toshiba
InventorsKoji Yamakawa, Kaoru Koiwa, Nobuo Iwase
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AssigneeKabushiki Kaisha Toshiba
InventorsKoji Yamakawa, Kaoru Koiwa, Nobuo Iwase
Estimating the term…
A plating solution is stored in an annular plating solution storage. A plating solution tank having an open upper portion is arranged in a hollow portion of the storage. A mesh-like anode electrode is arranged on the bottom portion of the plating tank. Hold members are attached to an upper side wall of the plating tank. One of the hold members is in contact with a portion to be plated of a semiconductor member and serves as a cathode electrode. The anode and cathode electrodes are connected to a DC power source. The plating solution in the plating solution tank is brought into contact with the portion to be plated and is isolated therefrom by an driving pump intermittently driven at predetermined intervals using an intermittent drive unit. The power source is kept in the ON state while the plating solution is in contact with the portion to be plated, there-by forming a plated layer on the portion to be plated.
A method of manufacturing a semiconductor device having a semiconductor member with plural portions to be plated, comprising the steps of:
A method of manufacturing a semiconductor device having a semiconductor member provided with plural bumps, comprising the steps of:
Dependencies are inferred from the claim text.