Method for wafer treating
AssigneeTexas Instruments Incorporated
InventorsDean W. Freeman, James B. Burris, Cecil J. Davis, Lee M. Loewenstein
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Abstract
A processing apparatus and method utilizing a single process chamber to remove organics and metallic contaminates, remove native oxides, oxidize by heat and a oxidizing source, depositing a layer over the oxide formed with the capability of providing an source of additional ultraviolet light.
Claims24
A process for processing a wafer within a process chamber comprising the steps of:
- (a) disposing said wafer within said process chamber at low pressure;
- (b) removing organics;
- (c) removing metallic contaminates;
- (d) removing native oxides caused by prior removal steps;
- (e) purging said chamber with an appropriate gas to a higher pressure than the low pressure;
- (f) introducing an oxidizing source into said chamber and heating said wafer to form an oxide layer;
- (g) purging said chamber with an appropriate gas;
- (h) annealing said wafer and then cooling said wafer;
- (i) evacuating said chamber to pressure lower than said higher pressure;
- and
- (j) forming a covering layer to protect said oxide layer.
A process for porcessing a wafer within a process chamber, comprising the steps of:
- (a) removing organics;
- (b) removing metallic contaminates;
- (c) removing native oxides;
- and
- (d) forming a thin film on the wafer.
The process as set forth inclaim 6 further including purging the chamber with N.sub.2 or Ar.
A process for processing a wafer, comprising the steps of:
- (a) disposing the wafer within the process chamber;
- (b) removing organics;
- (c) removing metallic contaminates;
- (d) rem,oving native oxides;
- (e) purging said chamber with an appropriate gas;
- (f) introducing an oxidizing source into the chamber and heating the wafer to form an oxide layer;
- (g) purging the chamber with an appropriate gas;
- (h) annealing the wafer and then cooling the wafer;
- (i) evacuating the chamber to pressure lower than the higher pressure;
- and
- (j) forming a covering layer to protect the oxide layer.
A method for processing a wafer within a process chamber, comprising the steps of:
- (a) transferring the wafer into the process chamber;
- (b) performing a first processing step;
- (c) performing a second processing step;
- and
- (d) removing the wafer from the process chamber.
Dependencies are inferred from the claim text.