US 4,905,066 A · Thin-film transistor

Abstract

A thin-film transistor comprising a substrate, a gate electrode formed on said substrate and made of molybdenum-tantalum alloy containing 60 to 85 atomic % of tantalum gate insulation film formed on said gate electrode and made of a laminated layer including silicon nitride film and oxide film formed by oxidizing the surface of said gate electrode, semiconductor film formed on said gate insulation film and contacting the silicon nitride film, and source and drain electrodes formed on the semiconductor film.

Claims6

Dependent claims

A thin-film transistor comprising:

a substrate;
a gate electrode formed in said substrate and made of molybdenum-tantalum alloy containing 60 to 85 atomic of tantalum;
gate insulation film formed on said gate electrode and made of a laminated layer including silicon nitride film and oxide film formed by oxidizing the surface of said gate electrode;
semiconductor film formed on said gate insulation film and contacting the silicon nitride film;
and
source and drain electrodes formed on the semiconductor film.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

07/340,546Filed 19 Apr 1989

Priority

JP 63-12277119 May 1988

Granted

27 Feb 1990

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10D 64/685
Having a compositional variation, e.g. multilayered: being perpendicular to the channel plane
H10D 30/0316
Characterised by the gate electrodes: of lateral bottom-gate TFTs comprising only a single gate
H10D 30/0321
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon
H10D 30/6731
Characterised by the shapes, relative sizes or dispositions of the gate electrodes: top-gate only TFTs

Abstract

Facts

Application

07/340,546Filed 19 Apr 1989

Priority

JP 63-12277119 May 1988

Granted

27 Feb 1990

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10D 64/685
Having a compositional variation, e.g. multilayered: being perpendicular to the channel plane
H10D 30/0316
Characterised by the gate electrodes: of lateral bottom-gate TFTs comprising only a single gate
H10D 30/0321
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon
H10D 30/6731
Characterised by the shapes, relative sizes or dispositions of the gate electrodes: top-gate only TFTs

Thin-film transistor

Life of this patent

Abstract

Claims6

Thin-film transistor

Life of this patent

Abstract

Claims6