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US 4,905,060 AGranted
Light emitting device with disordered region
AssigneeHitachi, Ltd.
InventorsNaoki Chinone, Hisao Nakashima, Makoto Okai, Shinji Tsuji
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Abstract
A light emitting device has a multiple layer film structure such as a multiple quantum well (MQW) structure which is made of an indium system compound semiconductor not containing phosphorus, wherein part of a region or regions of the multiple film structure is (are) a disordered region or regions disordered by introduction of an inpurity.
Claims17
A light emitting device comprising:
- a semiconductor substrate;
- a plurality of semiconductor layers stacked on said semiconductor substrate, being made of compound semiconductors which include indium substantially but not phosphorus substantially, and having a disordered region formed by introducing impurities into the semiconductor layers;
- and
- a pair of electrodes for injecting carriers into said semiconductor layers so as to emit light.
1 more element
A light emitting device comprising:
- a semiconductor substrate;
- and
- a region comprising a multiple layer structure having at least one disordered region therein;
- wherein said multiple layer structure has multiple layers made of a semiconductor compound containing indium and substantially no phosphorous as a constituent element thereof, and said disordered region is formed by diffusion of impurities in said multiple layer structure.
1 more element
A light emitting device comprising:
- a semiconductor substrate;
- a plurality of semiconductor layers formed on said substrate, comprising an active layer which emits light by injected carriers and a multiple layer structure which has at least one disordered region, wherein said multiple layer structure is made of a semiconductor compound containing indium and substantially no phosphorous as a constituent element of said semiconductor compound and said disordered region has a greater refractive index than that of at least one species of said layers in said multiple layer structure so as to confine light emitted from said active layer;
- and
- a pair of electrodes for injecting the carriers into said active layer.
1 more element
A light emitting device comprising:
- a semiconductor substrate;
- and
- a plurality of semiconductor layers formed on said substrate, comprising an active layer which emits light by injected carriers and a multiple layer structure which includes a disordered region, wherein said multiple layer structure comprises a semiconductor compound containing indium and substantially no phosphorous as a constituent element of said semiconductor compound, and said disordered region has a greater energy band gap than that of at least one species of said layers in said multiple layer structure so as to confine the carriers in said active layer.
A light emitting device comprising:
- a light emitting region emitting light in accordance with injected carriers therein;
- and
- a disordered region formed by introducing impurities into a plurality of semiconductor layers which are formed by stacked structure of a plurality of compound semiconductor materials including indium but not phosphorous.
Dependencies are inferred from the claim text.