Light-emitting semiconductor device
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsMasato Yamada, Shinji Orimo, Takao Takenaka
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Abstract
In a light-emitting semiconductor device of double heterostructure consisting of GaAlAs mixed crystal, a film of Ga.sub.1-y Al.sub.y As having a thickness less than 1 .mu.m is sandwiched in between a p-type clad layer of mixed crystal Ga.sub.1-x1 Al.sub.xl As and an n-type clad layer of mixed crystal Ga.sub.1-z Al.sub.z AS, whereby the wavelength of the emitted light is stabilized, and the thyristor phenomenon is curbed in the n-type clad layer, and at the same time the p-type carrier concentration is increased in the growth layer or in the substrate.
Claims1
A light-emitting semiconductor device of a multilayer structure consisting of the following layers accumulated in the following order:
- a highly-doped substrate or a growth layer of a p-type mixed crystal Ga.sub.1-x2 Al.sub.x2 As with carrier concentration p.sub.2, a clad layer of Ga.sub.1-x1 Al.sub.x1 As with carrier concentration p.sub.1, a non-dope active layer of mixed crystal Ga.sub.1-y Al.sub.y As, and an n-type mixed crystal Ga.sub.1-z Al.sub.z As-clad layer with carrier concentration n;
- where the compositions of the mixed crystals are selected as follows:
- y<x.sub.1,
- y<z,
- 0<x.sub.1 <1,
- 0.ltoreq.x.sub.2 <1,
- 0<y<1,
- 0<z<1;
- and the parameters p.sub.1, p.sub.2, and n are restricted, respectively, within the following limits:
- 1.times.10.sup.17 cm.sup.-3 <n<5.times.10.sup.17 cm.sup.-3
- 1.times.10.sup.16 cm.sup.-3 <p.sub.1 <3.times.10.sup.17 cm.sup.31 3
- 5.times.10.sup.17 cm.sup.-3 <p.sub.2
- and at the same time p.sub.1 <n.
Dependencies are inferred from the claim text.