Semiconductor devices
AssigneeHitachi, Ltd.
InventorsAkio Ohishi, Takao Kuroda, Shinji Tsuji, Motohisa Hirao, Hiroyoshi Matsumura
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Abstract
A semiconductor device such as a semiconductor laser device or a transistor which is small in both threshold current and leakage current and exhibits no increase with time in the threshold current and leakage current can be obtained by incorporating pnp or npn junctions in a buried layer which coats an active region containing InGaAsP, forming the mid layer of the junctions with InGaAsP, adjusting the conductivity type of the mid layer with an implanted ion and specifying the energy band width of a semiconductor constituting the mid layer.
Claims26
A semiconductor device comprising at least one buried hetero-semiconductor laser diode, the at least one buried hetero-semiconductor laser diode including a mesa stripe formed on a substrate, the mesa stripe including a laser active layer and having opposed sides and an upper surface, with semiconductor structure, including a p-n junction, formed on both of the opposed sides of the mesa stripe, the semiconductor structure forming a current blocking layer on each side of the mesa stripe, wherein said semiconductor structure includes at least one InGaAsP layer on each of the opposed sides of the mesa stripe, the energy band width of the InGaAsP layer being at least 1.3 eV and no greater than 1.4 eV.
A semiconductor device comprising a bipolar transistor having emitter and collector semiconductor layers separated by a base layer, with respective electrodes being provided to each of the emitter, base and collector layers, wherein the base layer is formed of InGaAsP, the energy band width of the InGaAsP base layer being at least 1.2 eV and not more than 1.4 eV.
A semiconductor device comprising at least one buried hetero-semiconductor laser diode, the at least one buried hetero-semiconductor laser diode including a mesa stripe formed on a substrate, the mesa stripe including a laser active layer and having opposed sides and an upper surface, with semiconductor structure, including a p-n junction, formed on both of the opposed sides of the mesa stripe, the semiconductor structure forming a current blocking layer on each side of the mesa stripe, wherein the p-n junction is a junction formed by implanting ions into semiconductor material forming the semiconductor structure so as to provide the p-n junction.
Dependencies are inferred from the claim text.