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US 4,904,886 AGranted
Gate array with high driving ability cells
AssigneeNEC Corporation
InventorToshio Tanahashi
Life of this patent
Estimating the term…
Abstract
A gate array for implementing a digital integrated circuit includes first cells and second cells of different kinds which are selectively usable depending upon the application of the gate array, i.e. the first cells for applications which need only a low driving ability and the second cells for applications which need a high driving ability.
Claims9
A gate array comprising:
- a logic area having a first cell and a second cell which is greater in area than said first cell by an integral multiple, wherein said first cell comprises a first transistor group, a first resistor group, and first wiring regions, and said second cell comprises a second transistor group, a second resistor group, and second wiring regions, and wherein said second transistor group is larger than said first transistor group, and said second resistor group has a resistance value lower than a resistance value of said first resistor group;
- and
- an input/output buffer area surrounding said logic area for interfacing said logic area to the outside for interchange of signals.
Dependencies are inferred from the claim text.