Method for separating monolithically produced laser diodes

Abstract

A method for separating laser diodes. The diodes are monolithically produced from a semiconductor substrate wafer which through an epitaxy process has been provided with a layer sequence suitable for laser operation. First, the semiconductor substrate wafer is covered with a first mask which defines the interspaces between the mirrors of adjacent laser diodes. Then the mirror surfaces are etched out of the semiconductor substrate wafer. Thereafter, the wafer is covered with a second mask for defining separation trench areas between the mirror surfaces of adjacent laser diodes and for protecting the remaining wafer parts. Then, separation are etched into the trench area. Finally, the laser diodes are separated by breaking the wafer along the trenches. In a preferred embodiment, the wafer thickness is at most twice the distance between the mirror surfaces of adjacent laser diodes and the trench depth is at least one fourth of the wafer thickness.

Dependencies are inferred from the claim text.