Formation of large grain polycrystalline films
AssigneeXerox Corporation
InventorsAnne Chiang, I-Wei Wu, Tiao-Yuan Huang
Life of this patent
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Abstract
A method of forming large grain polycrystalline films by deep ion implantation into a composite structure, comprising a layer of amorphous semiconductor material upon an insulating substrate. Implantation is of a given ion species at an implant energy and dosage sufficient to distrupt the interface between the amorphous layer and the substrate and to retard the process of nucleation in subsequent random crystallization upon thermal annealing.
Claims18
A method for forming large grain polycrystalline films comprising the steps of
- providing a layer of insulating material,
- depositing a layer of amorphous semiconductor material upon said layer of insulating material to form a composite structure,
- implanting an ion species into said composite structure at an implant energy and dosage so that the projected range of implantation is in the vicinity of the interface between said amorphous layer and said layer of insulating material so as to disrupt said interface by causing enough atoms from said layer of insulating material to recoil into said amorphous layer so that said amorphous layer will be energetically less favorable to nucleate and to grow grains, and
- annealing said composite structure at a temperature and at a steady state at which the suppression of the rate of nucleation by said implantation in said amorphous layer is more than the suppression of the rate of grain growth by said implantation in said amorphous layer, whereby random nucleation occurs within said amorphous layer to form a large grain polycrystalline film at saturation of grain growth.
A method for forming large grain polycrystalline films comprising the steps of
- providing a layer of insulating material,
- depositing a layer of amorphous semiconductor material upon said layer of insulating material to form a composite structure having an interface between said semiconductor material and said layer of insulating material,
- implanting an ion species into said composite structure at an implant energy and dosage sufficient to cause the maximum kinetic energy of said implantation to be deposited substantially at said interface for the purpose of disrupting said interface by causing enough atoms from said insulating material to recoil into said amorphous layer so that said amorphous layer will be energetically less favorable to nucleate and to grow grains, and
- annealing said composite structure at a temperature and at a steady state at which the suppression of the rate of nucleation by said implantation in said amorphous layer is more than the suppression of the rate of grain growth by said implantation in said amorphous layer, whereby random nucleation occurs within said amorphous layer to form a large grain polycrystalline film at saturation of grain growth.
A method for forming large grain polycrystalline films comprising the steps of
- providing a layer of insulating material,
- depositing a layer of amorphous semiconductor material upon said insulating material to form a composite structure,
- implanting an ion species into said composite structure at an implant energy and dosage so that the projected range of implantation is in the vicinity of the interface between said amorphous layer and said layer of insulating material so as to disrupt said interface by causing recoil of atoms from said insulating material into said amorphous layer so that said amorphous layer will be energetically less favorable to nucleate and to grow grains when said composite structure is annealed, and
- annealing said composite structure at a temperature and at a steady state so as to cause random nucleation within said amorphous layer and to form a large grain polycrystalline film at saturation of grain growth within said amorphous layer.
Dependencies are inferred from the claim text.