Electrophotographic process using light receiving member with buffer layer containing silicon and aluminum atoms on aluminum substrate

An electrophotographic process comprising:

• (a) charging an improved light receiving member including on a substrate constituted principally of aluminum, a buffer layer, a 0.03 to 15 .mu.m thick charge injection inhibition layer and a 1 to 100 .mu.m thick photoconductive layer being disposed in this order from the side of said substrate;
• said buffer layer comprising a non-single-crystal material containing silicon atoms and aluminum atoms to improve the contact between said substrate and said charge injection inhibition layer, said charge injection inhibition layer comprising a material selected from the group consisting of (a) a polycrystalline material containing silicon atoms as the main constituent, 3 to 5.times.10.sup.4 atomic ppm of an element selected from the group consisting of Group III and V elements of the Periodic Table and at least one kind of atom selected from the group consisting of hydrogen atoms and halogen atoms in a total amount of 1.times.10.sup.3 to 7.times.10.sup.5 atomic ppm and (b) an amorphous material containing silicon atoms as the main constituent, 3 to 5.times.10.sup.4 atomic ppm of an element selected from the group consisting of Group III and V elements of the Periodic Table and at least one kind of atom selected from the group consisting of hydrogen atoms and halogen atoms in a total amount of 1.times.10 to 6.times.10.sup.5 atomic ppm;
• and said photoconductive layer comprising an amorphous material containing silicon toms as the main constituent and at least one kind of atom selected from the group consisting of hydrogen atoms and halogen atoms in a total amount of 1 to 40 atomic %;
• and
• (b) irradiating said light receiving member with an electromagnetic wave carrying information thereby forming an electrostatic image.

An electrophotographic process comprising:

• (a) charging a light receiving member including on a substrate constituted principally of aluminum, a buffer layer, a 40 .ANG. to 50 .mu.m thick long wavelength light absorption layer and a 1 to 100 .mu.m thick photoconductive layer being disposed in this order from the side of said substrate;
• said buffer layer comprising a non-single-crystal material containing silicon atoms and aluminum atoms to improve the contact between said substrate and said long wavelength light absorption layer;
• said long wavelength light absorption layer comprising a non-single-crystal material containing silicon atoms, at least one kind of atom selected from the group consisting of germanium atoms and tin atoms in a total amount of 1 to 1.times.10.sup.6 atomic ppm and at least one kind of atom selected from the group consisting of hydrogen atoms and halogen atoms;
• and said photoconductive layer comprising an amorphous material containing silicon atoms as the main constituent and at least one kind of atom selected from the group consisting of hydrogen atoms and halogen atoms in a total amount of 1 to 40 atomic %;
• and
• (b) irradiating said light receiving member with an electromagnetic wave carrying information thereby forming an electrostatic image.