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US 4,904,515 AGranted
Heat-treatment member for semiconductor elements
AssigneeToshiba Ceramics Co., Ltd.
InventorsShuitsu Matsuo, Yoshinobu Tanada, Yasumi Sasaki
Life of this patent
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Abstract
A semiconductor element heat-treatment member has a Si-SiC body and a SiO.sub.2 coating formed on the surface of the Si-SiC body so as to cover the Si-SiC body. The SiO.sub.2 coating has a thickness ranging between 20.ANG. and 100,000.ANG..
Claims7
A heat-treatment member for semiconductor elements, comprising a body consisting essentially of Si and SiC and, provided on a surface of said body, a coating consisting essentially of SiO.sub.2 which ranges in thickness between about 20 .ANG. and 100,000 .ANG..
Dependencies are inferred from the claim text.