Method of manufacturing a single crystal of compound semiconductor and apparatus for the same

An apparatus for manufacturing a single crystal of compound semiconductor comprising at least two elements, comprising:

• a growth susceptor;
• a crucible for receiving and storing a first material containing at least one type of element and having a seed crystal arranged at a lower end portion thereof, said crucible being vertically movable relative to said growth susceptor;
• said crucible having an upper end open in said growth susceptor and a lower end with a small diameter tubular portion, the seed crystal being inserted in said tubular portion;
• a gas material susceptor, arranged below said crucible, for receiving and storing a material containing one type of element, said gas material susceptor and said crucible being arranged in said growth susceptor so as to be capable of communicating with each other, said gas material susceptor having an open upper end and being fixed to said growth susceptor;
• main heating means for heating and melting material in said crucible and for cooling the melt material from a lower portion thereof to grow a single crystal;
• a liquid stop plug fitted in said tubular portion of said crucible for separating the material in said crucible and the seed crystal in said tubular portion;
• urging means for urging, when material in said crucible is melted, the seed crystal from below to project said liquid stop plug from said tubular portion, thereby bringing the melt material and the seed crystal into contact with each other;
• sub heating means for heating and evaporating material in said gas material susceptor and for allowing the evaporated material to react with the melt material in said crucible;
• and
• magnetic field applying means for applying a vertical magnetic field in the melt material in said crucible so that a surface of the melt material in said crucible which is grown to a single crystal is lower in temperature at a central portion thereof than at a peripheral portion thereof in a radial direction and at the same time projects upward;
• said main heating means including control means for gradually decreasing the temperature of the heat applied to the melt material upward from a seed crystal, thereby growing a single crystal of compound semiconductor from the seed crystal.

A method of manufacturing a single crystal of compound semiconductor comprising at least two elements, comprising the steps of:

• storing a first material including at least one type of element in a crucible provided in a growth susceptor and arranging a seed crystal at a lower end portion of said crucible;
• storing a material including one type of element in a gas material susceptor arranged under said crucible;
• heating the material in said crucible, for thereby melting the material;
• evaporating, by heating, the material in said gas material susceptor, thereby causing the material in said gas material susceptor to react with the melt material in said crucible;
• applying a vertical magnetic field to the melt material in said crucible such that a central portion of the melt material in said crucible is lower in temperature than a periphery thereof in the radial direction and such that the material projects upward;
• and
• gradually decreasing the temperature of heat applied to the melt material upward, from the seed crystal, thereby growing a compound semiconductor monocrystal from the seed crystal.