Method and apparatus for fastening semiconductor components to substrates
AssigneeSiemens Aktiengesellschaft
InventorHerbert Schwarzbauer
Life of this patent
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Abstract
A method and apparatus for fastening semiconductor components, such as power semiconductors, onto substrates is a diffusion welding method wherein the surfaces to be joined are provided with precious metal contact layers and are pressed together with at least 500 kp/cm.sup.2 at a moderate temperature of approximately 150 to 200 degrees C. Components which have a structured or shaped upper side can be joined to substrates when they are inserted in common with a member of elastically deformable material, such as silicone rubber, into a receptacle chamber that is closed by a movable die which transmits the pressing power. The deformable member completely fills out the remaining interior of the receptacle chamber when the pressing power is reached.
Claims6
A method for fastening a surface of a semiconductor component to a surface of a substrate by diffusion welding, comprising the steps of:
- providing a surface of a semiconductor component to be joined to a substrate with a metallization, said metallization being a first precious metal contacting layer;
- providing a surface of said substrate to be joined to said component with a second precious metal contacting layer;
- placing said surface of said semiconductor component on said substrate;
- heating said semiconductor component and said substrate to a temperature in a range of approximately 150 to 250 degrees C.;
- and
- pressing said semiconductor component onto said substrate in an air-filled space with a pressing force in a range of approximately 500 through 2500 kp/cm.sup.2 while heating.
A method for fastening a semiconductor component to a substrate by diffusion welding, comprising the steps of:
- providing a surface of a semiconductor component to be joined to a substrate with a metallization, said metallization being a first precious metal contacting layer;
- providing a surface of said substrate to be joined to said component with a second precious metal contacting layer;
- inserting a plastically deformable metal foil between said first and second precious metal contacting layers, said metal foil having at least two opposite surfaces composed of a precious metal, said at least two opposite surfaces being against said first and second contacting layers;
- heating said component and said substrate and said metal foil to a temperature approximately in a range of 150 to 250 degrees C.;
- and
- pressing said component and said substrate and said metal foil together in an air filled space during heating with a pressing power of approximately 500 through 2500 kp/cm.sup.2.
Dependencies are inferred from the claim text.