Semiconductor component with contact hole
AssigneeSiemens Aktiengesellschaft
InventorsHelmut Strack, Gottfried Schuh
Life of this patent
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Abstract
A semiconductor component. The semiconductor component has two superimposed semiconductor layers of different conduction materials. An upper layer is provided with an opening through which a lower layer is exposed. A space saving scheme for connecting electrically the two layers is provided, by depositing a connecting layer which contacts the upper layer at an edge only and the lower layer is contacted at its depth where its doping material maximum is located. This requires a doping equal to or greater than 10.sup.19 cm.sup.-3 for the upper layer, which is dependent on thickness.
Claims6
A semiconductor component comprising:
- a semiconductor substrate having an upper side;
- a first layer of a first conductivity type having upper and lower sides with a predetermined separation therebetween, said lower side being supported on said upper side of said semiconductor substrate, said first layer having a doping concentration exhibiting a maximum concentration at a depth below said upper side of said first layer, said upper side of said first layer having therein a depression having a bottom located substantially at said depth of said maximum concentration;
- a second layer of a second conductivity type having a doping concentration greater than 10.sup.19 cm.sup.-3 and being supported on said upper side of said first layer, said second layer having therein an opening to expose said depression;
- and
- a conducting layer interconnecting said first and second layers, said conducting layer contacting said first layer at said depression and contacting said second layer at a wall of said opening.
Dependencies are inferred from the claim text.