Single plate capacitor having an electrode structure of high adhesion
AssigneeNEC Corporation
InventorYohichi Aono
Life of this patent
Estimating the term…
Abstract
A single plate capacitor includes a dielectric substrate having high dielectric constant, a first SiO.sub.2 film formed ona lower main surface of the dielectric substrate, a first TiW film formed on the first SiO.sub.2 film, a solder diffusion barrier film of Pt, Pd or Ni formed on the first TiW film, a first Au film formed on the solder diffusion barrier film, a second SiO.sub.2 film formed on an upper main surface of the dielectric substrate, a second TiW formed on the second SiO.sub.2 film and a second Au film formed on the second SiO.sub.2 film.
Claims6
A single plate capacitor comprising:
- a dielectric substrate essentially consisting of TiO.sub.2, and having a first and second main surfaces each provided with a multi-layer film structure positioned thereon,
- the multi-layer film structure on said first main surface of said dielectric substrate including:
- a first SiO.sub.2 film formed on said first main surface,
- a first TiW film formed on said first SiO.sub.2 film,
- a Pt film formed on said first TiW film, and
- a first Au film formed on said Pt film;
- the multi-layer film structure on said second main surface of said dielectric substrate including:
- a second SiO.sub.2 film formed on said second main surface,
- a second TiW film formed on said second SiO.sub.2 film, and
- a second Au film formed on said second TiW film.
An electronic device comprising a heat-sink substrate and a single plate capacitor mounted on said heat-sink substrate by a Au eutectic solder, said single plate capacitor including:
- a dielectric substrate essentially consisting of TiO.sub.2 and having an upper and lower main surface each provided with a multi-layer film structure positioned thereon;
- the multi-layer structure on said lower main surface of said dielectric substrate including:
- a first SiO.sub.2 film formed on said lower main surface,
- a first TiW film formed on said first SiO.sub.2 film,
- a Pt film formed on said first TiW film, and
- a first Au film formed on said Pt film;
- the multi-layer film on said upper main surface of said dielectric substrate including:
- a second SiO.sub.2 film formed on said upper main surface,
- a second TiW film formed on said second SiO.sub.2 film, and
- a second Au film formed on said second TiW film, wherein a metal wire is bonded on said second Au film.
Dependencies are inferred from the claim text.