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US 4,903,108 AGranted
Radiation hardened complementary transistor integrated circuits
AssigneeHarris Corporation
InventorsWilliam R. Young, Anthony L. Rivoli, William W. Wiles, Jr.
Life of this patent
Estimating the term…
Abstract
Integrated circuits with vertical isolated trenches are radiation hardened by providing vertical gate segments, preferably, of doped polycrystalline silicon, in the trenches and connected at the bottom of the trenches to a region of the same conductivity type. The surface devices may be complementary and the vertical gates may also be complementarily doped. A method of fabrication is described for a single crystal wafer, as well as SOI.
Claims11
An integrated circuit comprising:
- a first means having a first and second surface region of a first conductivity type spaced in a third region of a second conductivity type;
- a second means having a fourth and fifth surface region of said second conductivity type in a sixth region of said first conductivity type;
- a trench laterally separating said first, second and fourth, fifth regions and portions of said third and sixth regions;
- a first gate in said trench connected to said third region at the bottom of said trench and separated from said first, second and third regions laterally by a first insulative layer;
- and
- a second gate in said trench connected to said sixth region at the bottom of said trench, and separated from said fourth, fifth and sixth regions laterally by a second insulative layer and separated from said first gate by a third insulative layer.
3 more elements
An integrated circuit comprising:
- a first means having a first and second surface region of a first conductivity type spaced in a third region of a second conductivity type;
- a second means having a fourth and fifth surface region of said second conductivity type in said sixth region of said first conductivity type;
- a trench laterally separating said first, second and fourth, fifth regions and portions of said third and sixth regions;
- a first gate in said trench connected to said third region, and separated from said first and second regions and portions of said third region laterally by a first insulative layer, and said first gate extends vertically at least the depth of said first and second regions and extends laterally at least the width of the portion of said third region which separates said first and second regions;
- a second gate in said trench connected to said sixth region, separated from said fourth and fifth regions and portions of said sixth region laterally by a second insulative layer, and separated from said first gate by a third insulative layer;
- and
- said second gate extends vertically at least the depth of said fourth and fifth regions and extends laterally at least the width of the portion of said sixth region which separates said fourth and fifth regions.
4 more elements
An integrated region comprising:
- a first means having a first and second surface region of a first conductivity type spaced in a third region of a second conductivity type;
- a second means having a fourth and fifth surface region of said second conductivity type in a sixth region of said first conductivity type;
- a buried dielectric layer under said third and sixth regions;
- a trench laterally separating said first, second and fourth, fifth regions;
- a first gate in said trench connected to said third region at the bottom of said trench and separated from said first, second and third regions laterally by a first insulative layer;
- a second gate in said trench connected to said sixth region at the bottom of said trench, and separated from said fourth, fifth and sixth regions laterally by a second insulative layer and separated from said firsts gate by a third insulative layer;
- and
- said trench extending to said buried dielectric layer between said first and second gates and being filled with dielectric insulation to laterally isolate said third and sixth regions.
5 more elements
Dependencies are inferred from the claim text.