Semiconductor photoelectric conversion device and method of making the same

Abstract

A semiconductor photoelectric conversion device is provided with a PIN structure which comprises P-type, I-type and N-type non-single-crystal semiconductor layers laminated in that order or in the reverse order. The I-type layer contains a recombination center neutralizer by hydrogen or fluorine and is doped with an alkali metal element by lithium, sodium or potassium, in a concentration higher than that of oxygen and/or nitrogen that the I-type layer contains. Further, the I-type layer is doped with a P-type impurity such as boron so as to compensate for the N-type conductivity of the alkali metal element. The PIN structure is formed by a CVD method. The I-type layer is doped with the alkali metal element by using as alkali metal element material gas during the formation of the I-type layer, or by dipping the PIN structure into an aqueous solution of the alkali metal element or implanting alkali metal element ions into the PIN structure after forming the structure.

Dependencies are inferred from the claim text.