Semiconductor laser with large bandgap connection layer

A semiconductor device for production electro-magnetic radiation having a semiconductor body comprising a radiation-emitting element having an active layer, in which active layer electromagnetic radiation can be produced by injection of hot charge carriers, and an injection element, in which the said hot charge carriers are generated by avalanche multiplication, the radiation-emitting element and the injection element each comprising a monocrystalline epitaxial layer structure, characterized in that the layer structures of the radiation-emitting element and of the injection element adjoin each other epitaxially and the active layer is connected to the injection element by means of a semiconductor connection layer having a band gap larger than that of the active layer and that of the adjoining layer of the injection element, the materials of the active layer and of the connection layer being chosen so that at their interface the lower level of the conduction band in the active layer lies below the lower level in the conduction band in the connection layer and the upper level of the valency band in the active layer lies above the upper level of the valency band in the connection layer.