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AssigneeAmerican Telephone and Telegraph Company, AT&T Bell Laboratories
InventorsFederico Capasso, Alfred Y. Cho, Susanta Sen, Masakazu Shoji, Deborah Sivco
Estimating the term…
A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g., in apparatus designed for ternary logic operations, frequency multiplication, waveform scrambling, memory operation, parity-bit generation, and coaxial-line driving. The device can be made by layer deposition on a substrate and includes a resonant-tunneling structure between contacts such that side-by-side first and third contacts are on one side, and a second contact is on the opposite side of the resonant-tunneling structure.
Apparatus comprising a semiconductor device which comprises first (A), second (S), and third (B) terminals, said device being capable of operating such that the current-voltage characteristic between said first terminal and said second terminal comprises a plurality of voltage ranges in which differential resistance is negative,
Dependencies are inferred from the claim text.