Ion beam gun and ion beam exposure device
AssigneeSeiko Epson Corporation
InventorSeiichi Iwamatsu
Life of this patent
Estimating the term…
Abstract
An ion beam exposure device including an ion beam source and an ion beam mask is provided. The ion beam source is formed from a thin film which is disposed between a vacuum side and a gas side. The film is in the form of a plate having a fine wire buried therein or a crystal boundary formed therein. An electric field supplied to the plate ionizing the gas passing from the gas source side of the plate to the vacuum side. A patterned ion mask may be formed directly on the ion beam source, thereby creating an ion beam gun which emits an ion beam in the desired pattern.
Claims42
An ion beam gun for ionizing a gas comprising:
- gas supply means having an outlet port for supplying gas to be ionized;
- ion emission means including a thin film and means for applying a voltage to the thin film for emitting ions of the gas in the gas supply means, the ion emission means disposed on the outlet port of the gas supply means for emitting ions;
- the thin film being a thin plate with a pin hole and a second thin film for emitting the ions disposed on the gas supply side of the thin plate;
- and
- vacuum means for providing a vacuum on the ion emitting side of the emission means and for receiving the ions emitted by the ion emission means.
An ion beam gun for ionizing a gas comprising:
- gas supply means having an outlet port for supplying gas to be ionized;
- ion emission means including a thin film and means for applying a voltage to the thin film for emitting ions of the gas in the gas supply means, the ion emission means disposed on the outlet port of the gas supply means for emitting ions;
- the thin film being a thin plate with a superfine wire disposed in the plate, the superfine wire communicating with the outlet port;
- and
- vacuum means for providing a vacuum on the ion emitting side of the emission means and for receiving the ions emitted by the ion emission means.
An ion beam gun for ionizing a gas comprising:
- gas supply means having an outlet port for supplying gas to be ionized;
- ion emission means including a thin film and means for applying a voltage to the thin film for emitting ions of the gas in the gas supply means, the ion emission means disposed on the outlet port o the gas supply means for emitting ions;
- the thin film being a monocrystalline silicon substrate and a superfine wire selected from the group consisting of palladium, titanium and tungsten is deposited within the substrate and communicates with the outlet port of the gas supply means;
- and
- vacuum means for providing a vacuum on the ion emitting side of the emission means and for receiving the ions emitting by the ion emission means.
An ion beam gun for ionizing a gas comprising:
- gas supply means having an outlet port for supplying gas to be ionized;
- ion emission means including a thin film and means for applying a voltage to the thin film for emitting ions of the gas in the gas supply means, the ion emission means disposed on the outlet port of the gas supply means for emitting ions;
- the thin film being a monocrystalline substrate having a defective crystal portion dislocation therein, the defect disposed over the outlet port of the supply means and sufficiently wide to allow the passage therethrough of a single particle to be ionized at a time;
- and
- vacuum means for providing a vacuum on the ion emitting side of the emission means and for receiving the ions emitted by the ion emission means.
An ion beam exposure mask comprising:
- an ion emitting substrate
- means for applying a voltage to the substrate for emitting ions;
- and
- a nitride film selectively formed in a pattern of the ion emitting surface of the substrate, whereby the nitride film selectively permits passage of the ions in the form of the pattern of the nitride film.
An ion beam gun for ionizing a gas, comprising:
- container means for holding the gas to be ionized, the container means including a gas inlet port and a vacuum port;
- high voltage power means for generating a high voltage signal;
- an ion beam pattern mask in the container coupled to the voltage power means for forming an ion emitting surface;
- grid means in the container and spaced apart from and in cooperating with the pattern mask as a grid for ionizing the gas and transforming the gas into a plasma.
An ion beam exposure device for exposing a wafer to an ion beam produced from an ionized gas, comprising:
- an insulating mask substrate positioned opposite to a wafer to be irradiated;
- a conducting material formed in a pattern on the surface of the substrate facing the wafer;
- and
- energizing means for energizing the conducting layer to emit ions in a pattern corresponding to the pattern of the conducting material;
- having a high frequency generator coupled to the conductive layer and the silicon wafer.
An ion beam exposure device for exposing a wafer to an ion beam produced from an ionized gas, comprising:
- an insulating mask substrate positionized opposite to a wafer to be irradiated;
- a conducting material formed in a pattern on the surface of the substrate facing the wafer;
- energizing means for energizing the conducting layer to emit ions in a pattern corresponding to the pattern of the conducting material;
- and
- a high frequency power means, for generating a high frequency signal, the high frequency power means being coupled to the pattern of conducting material on the substrate.
An ion beam gun for ionizing a gas comprising:
- gas supply means having an outlet port for supplying gas to be ionized;
- ion emission means including a thin film and heating means for heating the thin film for emitting ions of the gas in the gas supply means, the ion emission means disposed on the outlet port of the gas supply means for emitting ions;
- the thin film being a thin plate with a superfine wire being disposed in the plate, the superfine wire communicating with the outlet port;
- and
- vacuum means for providing a vacuum on the ion emitting side of the emission means and for receiving the ions emitted by the emission means.
An ion beam gun for ionizing gas comprising:
- gas supply means having an outlet port for supplying gas to be ionized;
- ion emission means including a thin film and means for applying a voltage to the thin film for emitting ions of the gas in the gas supply means, the ion emission means disposed on the outlet port of the gas supply means for emitting ions;
- the thin film being a monocrystalline substrate having a grain crystal boundary formed therein, the crystal grain boundary being disposed over the outlet port of the gas supply means;
- and
- vacuum means for providing a vacuum on the ion emitting side of the emission means for receiving the ion emitted by the ion emission means.
Dependencies are inferred from the claim text.