Surface modification using low energy ground state ion beams
AssigneeThe United States of American as represented by the Administrator of the National Aeronautics and Space Administration
InventorsAra Chutjian, Michael H. Hecht, Otto J. Orient
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Abstract
A method of effecting modifications at the surfaces of materials using low energy ion beams of known quantum state, purity, flux and energy. The ion beam is obtained by bombarding ion-generating molecules with electrons which are also at low energy. The electrons used to bombard the ion generating molecules are separated from the ions thus obtained and the ion beam is directed at the material surface to be modified. Depending on the type of ion generating molecules used, different ions can be obtained for different types of surface modifications such as oxidation and diamond film formation.
Claims14
A method of effecting changes at the surface of a semiconductor material in the fabrication of semiconductor devices comprising the steps of:
- supplying a stream of molecules which will emit ions when bombarded with electrons;
- bombarding the stream of molecules with electrons which have been accelerated to sufficient energy to produce a beam composed of ions in the ground state;
- and
- directing the beam of ions in the ground state at the surface so as to effect changes at the surface without generating substantial heat.
A method of oxidizing a surface of a semiconductor comprising the steps of:
- supplying a stream of molecules which will emit oxygen ions when bombarded with electrons;
- bombarding the stream of molecules with electrons which have been accelerated to sufficient energy to produce a beam of oxygen ions in the ground quantum state;
- and
- directing the beam of oxygen ions at the surface of the semiconductor material to oxidize the surface without generating substantial heat.
Dependencies are inferred from the claim text.