Method of selectively forming a silicon-containing metal layer
AssigneeFujitsu Limited
InventorTakayuki Ohba
Life of this patent
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Abstract
A method of selectively forming (growing or depositing) a silicon-containing metal layer on an exposed surface of a semiconductor substrate or a conductor by using a metal halide gas and a silicon hydride gas at a ratio of a flow rate of the latter gas to that of the former gas (e.g., Si.sub.n H.sub.2n+2 /WF.sub.6) of 2 or less, and setting a growth temperature at 200.degree. C. or less. When a Si.sub.3 H.sub.8 gas and a WF.sub.6 gas, in particular, are used at a ratio of the flow rates (Si.sub.3 H.sub.8 /WF.sub.6) of 1.0 or less, and the deposition temperature is set at 100.degree. C. to room temperature, a silicon-containing tungsten layer is selectively deposited (formed).
Claims21
A method of forming a silicon-containing metal layer on a substrate with a surface of a conductor or a semiconductor and a surface of an insulator by a low pressure chemical vapor deposition using a metal halide gas and a silicon hydride gas as reaction gases, characterized in that a ratio of the flow rate of said silicon hydride gas to that of said metal halide gas is 2 or less and the deposition temperature is 200.degree. C. or less, to selectively deposit said silicon-containing metal layer having a ratio of silicon to metal of 0.6 or less on said surface of the conductor or semiconductor of the substrate.
A method of fabricating a semiconductor device provided with a multilevel interconnection structure having conductor layers of aluminum or aluminum alloy, comprising steps of:
- (a) forming a first conductor layer on an insulating film formed on a semiconductor substrate;
- (b) selectively depositing a first silicon-containing layer on a surface of said first conductor layer without substantial deposit thereof on insulating surfaces;
- (c) forming an interlaminar insulating film overall;
- (d) selectively etching said interlaminar insulating film to open a contact hole in which a portion of said first conductor layer is exposed;
- (e) selectively depositing a second silicon-containing metal layer having a ratio of silicon to metal of 0.6 or less within said contact hole without substantial deposit thereof an insulating surface;
- (f) forming a second conductor layer over said second silicon-containing metal layer and said interlaminar insulating film;
- and
- (g) selectively depositing a third silicon-containing metal having a ratio of silicon to metal of 0.6 or less layer on said second conductor layer without substantial deposit thereof on insulating surfaces, wherein, said steps (b), (e) and (g) are carried out by using a metal halide gas and a silicon hydride gas as reaction gases at ratio of a flow rate of said silicon hydride gas to that of the metal halide gas of 2 or less at a deposition temperature of 200.degree. C. or less.
Dependencies are inferred from the claim text.