Method of selective epitaxial growth for compound semiconductors

Abstract

A method of selective epitaxial growth for compound semiconductor includes the steps of forming a layer of group IV element semiconductor, such as Ge, with a predetermined pattern on a compound semiconductor substrate and forming a compound semiconductor layer selectively on the compound semiconductor substrate by alternately supplying a gas of compound containing a group III or II element, such as trimethylgallium, triethylgallium and triisobutylaluminum, and a gas of compound containing a group V or VI element, such as AsH.sub.3, onto both surface of the layer of group IV element semiconductor and the compound semiconductor substrate. Another semiconductor layer of group IV element semiconductor or compound semiconductor may be formed on the layer of group IV element semiconductor by organometallic vapor phase epitaxy or MBE.

Dependencies are inferred from the claim text.