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US 4,902,641 AGranted
Process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure
AssigneeMotorola, Inc.
InventorDaniel N. Koury, Jr.
Life of this patent
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Abstract
A process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure. After the processing of polysilicon layers, dielectric layers, an epitaxial region and a nitride layer, a second substrate is bonded to the nitride layer and the first substrate is removed. This allows for an epitaxial region which is isolated from the substrate.
Claims21
A process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure comprising the steps of:
- providing a first substrate;
- forming a first dielectric layer on said first substrate;
- forming a first polysilicon layer on said first dielectric layer;
- forming a second dielectric layer on said first polysilicon layer;
- forming a second polysilicon layer on said second dielectric layer;
- forming a third dielectric layer on said second polysilicon layer;
- etching an opening through said dielectric layers and said polysilicon layers, said opening extending to said first substrate;
- forming epitaxial region on said first substrate in said opening;
- forming a last dielectric layer on said epitaxial region and said third dielectric layer;
- bonding a second substrate to said last dielectric layer;
- inverting said semiconductor device;
- removing said first substrate;
- etching a plurality of contact openings in said semiconductor device;
- and
- forming electrical contacts in said contact openings.
12 more elements
A process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure comprising the steps of:
- providing a first substrate;
- forming a first dielectric layer on said first substrate;
- forming a first polysilicon layer on said first dielectric layer, said first polysilicon layer being doped in a first conductivity type;
- forming a second dielectric layer on said first polysilicon layer;
- forming a second polysilicon layer on said second dielectric layer, said second polysilicon layer being doped in a second conductivity type;
- forming a third dielectric layer on said second polysilicon layer;
- etching an opening through said dielectric layers and said polysilicon layers, said opening extending to said first substrate;
- forming oxide edges in said opening on said first polysilicon layer;
- forming an epitaxial region on said first substrate in said opening;
- forming a drain in said epitaxial region;
- forming a gate in said first polysilicon layer;
- forming a source in said epitaxial;
- forming a last dielectric layer on said epitaxial region and said third dielectric layer;
- bonding a second substrate to said last dielectric layer;
- inverting said semiconductor device;
- and
- removing said first substrate.
14 more elements
A process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure comprising the steps of:
- providing a first substrate;
- forming a first dielectric layer on said first substrate;
- forming a first polysilicon layer on said first dielectric layer;
- doping said first polysilicon layer;
- patterning and etching said doped first polysilicon layer;
- forming a second dielectric layer on said first polysilicon layer;
- forming a second polysilicon layer on said second dielectric layer;
- doping said second polysilicon layer;
- patterning and etching said doped second polysilicon layer;
- forming a third dielectric layer on said second polysilicon layer;
- patterning and etching an opening through said first, second and third dielectric layers as well as said first and second polysilicon layers, said opening extending to said first substrate;
- forming an epitaxial region on said first substrate in said opening;
- forming a fourth dielectric layer on said epitaxial region and said third dielectric layer;
- forming a nitride layer on said fourth dielectric layer;
- providing a second substrate;
- bonding said second substrate to said nitride layer;
- removing said first substrate from said semiconductor device;
- inverting said semiconductor device;
- patterning and etching a plurality of contact openings in said semiconductor device;
- and
- forming metal contacts in said contact openings.
18 more elements
A process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure comprising the steps of:
- providing a first substrate;
- forming a first dielectric layer on said first substrate;
- forming a first polysilicon layer on said first dielectric layer, said first polysilicon layer being doped in a first conductivity type;
- patterning and etching said first polysilicon layer;
- forming a second dielectric layer on said first polysilicon layer;
- forming a second polysilicon layer on said second dielectric layer, said second polysilicon layer being doped in a second conductivity type;
- patterning and etching said second polysilicon layer;
- forming a third dielectric layer on said second polysilicon layer;
- patterning and etching an opening through said first, second and third dielectric layers as well as said first and second polysilicon layers, said opening extending to said first substrate;
- forming oxide edges in said opening on the first polysilicon layer;
- forming an epitaxial region on said first substrate in said opening;
- forming a drain in said epitaxial region;
- forming a gate in said first polysilicon layer;
- forming a source in said epitaxial region;
- forming a fourth dielectric layer on said epitaxial region and said third dielectric layer;
- forming a nitride layer on said fourth dielectric layer;
- providing a second substrate;
- bonding said second substrate to said nitride layer;
- removing said first substrate from said semiconductor device;
- inverting said semiconductor device;
- and
- etching said epitaxial region so that a first surface is in a plane below a plane which includes the first surface of said first dielectric layer.
19 more elements
Dependencies are inferred from the claim text.