Monitoring the fabrication of semiconductor devices by photon induced electron emission
AssigneeAT&T Bell Laboratories
InventorsStephen W. Downey, Richard A. Gottscho
Life of this patent
Estimating the term…
Abstract
Gas phase processes such as plasma etching of a semiconductor substrate is monitored by utilizing the optogalvanic effect. The substrate is subjected to light and in response emits an electron current whose magnitude is representative of the composition at the surface of the substrate. The monitored current is a sensitive indication of surface contamination and of compositional changes associated with the gas phase procedure. The technique is effectively utilized in fabricating devices such as semiconductor devices.
Claims12
A process for fabricating a device comprising the steps of subjecting a substrate to a gas phase species to induce a change in said substrate and employing said changed substrate to effect said fabrication characterized in that during said change, said substrate is subjected to non-particle electromagnetic radiation that induces formation of free electrons in said substrate, said electrons are monitored and said change is either terminated, adjusted, or allowed to continue based on said monitoring wherein said change is induced by a source other than said non-particle electromagnetic radiation.
Dependencies are inferred from the claim text.