Integrated laser arrays and support circuits

A semiconductor laser array comprising:

• a plurality of semiconductor lasers formed by sequential epitaxial layers of semiconductor material disposed on a semiconductor substrate so that light produced by each of said plurality of semiconductor lasers is emitted in a direction substantially parallel to said semiconductor substrate;
• a plurality of internal reflectors composed of a low index material, each of said plurality of internal reflectors having a slanted surface, each of said internal reflectors corresponding to a respective semiconductor laser and disposed on said semiconductor substrate adjacent to said respective semiconductor laser positioned to deflect light emitted from said respective laser on said slanted surface;
• a high index material disposed on and embedding both said plurality of said semiconductor lasers and said plurality of said internal reflectors so that light emitted from each of said plurality of semiconductor lasers enters said high index material before striking said slanted surface;
• wherein the indexes of refraction of said low index and said high index material are chosen so that all of the light striking said slanted surfaces of each of said plurality of internal reflectors is deflected back into said high index material at an angle equal to the angle of incidence.

A semiconductor laser element comprising:

• a semiconductor laser formed by sequential epitaxial layers of semiconductor material disposed on a semiconductor substrate so that light produced by said semiconductor laser is emitted in a direction substantially parallel to said semiconductor substrate;
• two internal reflectors composed of a low index material each having a slanted surface, said internal reflectors disposed on said semiconductor substrate at either end of and adjacent to said semiconductor laser and positioned to deflect light emitted from said laser on said slanted surfaces;
• a high index material disposed on and embedding both said semiconductor laser and said internal reflectors so that light emitted from said semiconductor laser enters said high index material before striking said slanted surface;
• wherein the indexes of refraction of said low index and said high index material are chosen so that all of the light emitted by said laser striking each said slanted surface of said internal reflectors is deflected back into said high index material at an angle equal to the angle of incidence.

A semiconductor light emitting element comprising:

• a semiconductor light emitting element formed by sequential layers of semiconductor material disposed on a semiconductor substrate so that light produced by said semiconductor light emitting element is emitted in a direction substantially parallel to said semiconductor substrate;
• an internal reflector composed of a low index material having a slanted surface, said internal reflector disposed on said semiconductor substrate adjacent to said semiconductor light emitting element and positioned to deflect light emitted from said light emitting element on said slanted surface;
• a high index material disposed on and embedding both said semiconductor light emitting element and said internal reflector so that light emitted from said semiconductor light emitting element enters said high index material before striking said slanted surface;
• wherein the indexes of refraction of said low index and said high index material are chosen so that all of the light emitted by said light emitting element striking said slanted surface of said internal reflector is deflected back into said high index material at an angle equal to the angle of incidence.