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US 4,901,326 AGranted
Semiconductor laser device
AssigneeSharp Kabushiki Kaisha
InventorsToshiro Hayakawa, Takahiro Suyama, Masafumi Kondo, Kosei Takahashi
Life of this patent
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Abstract
A semiconductor laser device of this invention comprises a plurality of semiconductor epitaxial layers grown on a semiconductor substrate, wherein the growth plane of said substrate is substantially the (111) plane.
Claims12
In a semiconductor laser device, the combination of:
- a semiconductor substrate;
- a first electrode formed under said substrate;
- a buffer layer formed on said substrate;
- a double heterostructure laser operating area comprising successively a first cladding layer, an active layer, and a second cladding layer on said buffer layer;
- a cap layer formed on said laser operating area;
- a current blocking layer formed on said cap layer, said current blocking layer having a stripe-shaped groove;
- a contact layer formed on the upper face of said current blocking layer;
- and
- a second electrode formed on the upper face of said contact layer and on the inner face of said stripe-shaped groove;
- wherein the growth plane of said substrate is substantially the (111) plane and said double heterostructure laser operating area is disposed above said growth plan.
7 more elements
In a semiconductor laser device, the combination of:
- a semiconductor substrate;
- a first electrode formed under said substrate;
- a buffer layer formed on said substrate;
- a double heterostructure laser operating area comprising successively a first cladding layer, an active layer, and a second cladding layer on said buffer layer, said second cladding layer having a striped ridge positioned opposite to the active layer side;
- a cap layer formed on the top surface of said striped ridge;
- an insulating layer formed on the portion of the surface of said second cladding layer other than said striped ridge and on the side walls of said striped ridge and said cap layer;
- and
- a second electrode formed on said cap layer and said insulating layer;
- wherein the growth plane of said substrate is substantially the (111) plane and said double heterostructure laser operating area is disposed above said growth plane.
6 more elements
In a semiconductor laser device, the combination of:
- a semiconductor substrate;
- a first electrode formed under said substrate;
- a buffer layer formed on said substrate;
- a double heterostructure laser operating area in the form of a striped mesa comprising successively a first cladding layer, an active layer, and a second cladding layer on the center portion of the surface of said buffer layer;
- a multi-layer structure burying both sides of said laser operating area, said multi-layer structure having successively a first burying layer and a second burying layer on the remaining portion of the surface of said buffer layer;
- a cap layer formed on the top surface of said striped mesa and on said second burying layer;
- and
- a second electrode formed on said cap layer;
- wherein the growth plane of said substrate is substantially the (111) plane and said double heterostructure laser operating area is disposed above said growth plane.
6 more elements
In a semiconductor laser device, the combination of:
- a semiconductor substrate;
- a first electrode formed under said substrate;
- a buffer layer formed on said substrate;
- a double heterostructure laser operating area comprising successively a first cladding layer, an active layer, and a second cladding layer on said buffer layer, said second cladding layer containing a current blocking layer with an opening portion extending therethrough in the form of a stripe;
- a cap layer formed on said laser operating area;
- and
- a second electrode formed on said cap layer;
- wherein the growth plane of said substrate is substantially the (111) plane and said double heterostructure laser operating area is disposed above said growth plane.
5 more elements
Dependencies are inferred from the claim text.