High density read-only memory

In a read only memory wherein pairs of field effect transistors, each having actuable gate, drain and source electrodes, are disposed to form an M X N matrix, where M is the number of rows and N is the number of columns in such matrix, with the gate electrode of each one of the N pairs of field effect transistors in each one of the M rows being connected to a "one out of M" decoder so that the gate electrodes of the field effect transistors in a selected row may be actuated and with the drain electrodes of a first one of each one of the M pairs of field effect transistors in each one of the N columns being connected to a first one of corresponding N output lines and the drain electrode of the second one of each one of such M pairs being connected to a second one of the corresponding N output lines so that the drain electrode of each field effect transistor in each one of such M pairs may be separately actuated, the improvement comprising:

• (a) means, responsive to the "one out of M" decoder, for producing a first and a second actuating signal for the source electrodes of the N pairs of field effect transistors in the selected row;
• and
• (b) means for applying the first actuating signal to the source electrode of the first field effect transistor in each one of the N pairs of field effect transistors in the selected row and for applying the second actuating signal to the source electrode of the second field effect transistor in each one of the N pairs of field effect transistors in the selected row whereby the gate, drain and source electrodes of only a single one of the M pairs of field effect transistors in each one of the N columns may be simultaneously actuated.